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| inchange semiconductor isc product specification isc silicon pnp power transistor 2SB688 description collector-emitter breakdown voltage- : v (br)ceo = -120v(min) good linearity of h fe complement to type 2sd718 applications audio frequency power am plifier applications recommend for 45-50w audio frequency amplifier output stage applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -120 v v ceo collector-emitter voltage -120 v v ebo emitter-base voltage -5 v i c collector current-continuous -8 a i b b base current-continuous -0.8 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB688 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -50ma ; i b = 0 -120 v v ce (sat) collector-emitter saturation voltage i c = -5.0a; i b = -0.5a b -2.5 v v be( on ) base-emitter on voltage i c = -5a ; v ce = -5v -1.5 v i cbo collector cutoff current v cb = -120v ; i e = 0 -10 a i ebo emitter cutoff current v eb = -5v; i c = 0 -10 a h fe dc current gain i c = -1a ; v ce = -5v 55 160 c ob output capacitance i e = 0; v cb = -10v; f test = 1.0mhz 280 pf f t current-gain?bandwidth product i c =-1a ; v ce = -5v 10 mhz ? h fe classifications r o 55-110 80-160 isc website www.iscsemi.cn 2 inchange semiconductor isc product specification isc silicon pnp power transistor 2SB688 isc website www.iscsemi.cn |
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